Infineon BGA824N6E6327XTSA1: A High-Performance Low-Noise Amplifier for Modern 5G and LTE Systems
The rapid expansion of 5G networks and the continued reliance on robust LTE connectivity demand RF components that deliver exceptional performance, reliability, and integration. At the heart of many modern receiver front-ends is the low-noise amplifier (LNA), a critical component responsible for amplifying weak signals from the antenna while adding minimal noise. The Infineon BGA824N6E6327XTSA1 stands out as a premier solution engineered to meet these exacting requirements.
This LNA is designed to operate over a wide frequency range from 400 MHz to 3800 MHz, making it exceptionally versatile for a vast array of applications. It seamlessly supports all key cellular bands, including legacy 4G LTE networks and new 5G deployments in the sub-6 GHz spectrum. Its ultra-wideband capability allows designers to use a single component across multiple bands, simplifying board design and reducing inventory complexity.
A defining characteristic of this amplifier is its outstanding low-noise figure of just 0.6 dB at 1.8 GHz. This exceptional performance is crucial for enhancing receiver sensitivity, as it ensures that the very faint signals captured by the antenna are amplified with minimal degradation. This results in clearer calls, faster data rates, and improved overall network performance, especially at the cell edge where signals are weakest.
Furthermore, the BGA824N6E6327XTSA1 provides high gain of up to 21.2 dB, which effectively boosts the desired signal well above the noise floor of subsequent stages in the receiver chain. Despite this high gain, the device maintains excellent linearity, characterized by an output third-order intercept point (OIP3) of 24.5 dBm. This strong linearity is vital for preventing intermodulation distortion and handling strong interfering signals without desensitizing the receiver.
Housed in a miniature, lead-free TSNP-6-11 (SOT-363) package, this LNA is ideal for space-constrained applications like smartphones, IoT modules, small cells, and customer premises equipment (CPE). It incorporates internal matching and requires only a few external bias components, enabling a very compact and simple PCB layout. The device also includes an integrated bypass switch, allowing the high-gain path to be shut off to conserve power and protect the downstream circuitry when operating in high-signal-strength environments.
ICGOODFIND: The Infineon BGA824N6E6327XTSA1 is a superior low-noise amplifier that combines ultra-low noise, high gain, and excellent linearity in a minuscule package. It is an ideal and future-proof building block for designers aiming to maximize receiver performance in 5G NR and LTE applications, from mobile devices to network infrastructure.
Keywords: Low-Noise Amplifier (LNA), 5G, LTE, RF Front-End, High Linearity
