Infineon IPB80R290C3A CoolMOS™ Power Transistor: Key Features and Application Advantages

Release date:2025-10-29 Number of clicks:196

Infineon IPB80R290C3A CoolMOS™ Power Transistor: Key Features and Application Advantages

The Infineon IPB80R290C3A represents a significant advancement in high-voltage power MOSFET technology, leveraging Infineon’s proprietary CoolMOS™ C3 series. Designed for high-efficiency and high-frequency switching applications, this power transistor is widely adopted in industries ranging from industrial power supplies to renewable energy systems. Its innovative technology offers a remarkable balance between low switching losses and high reliability.

One of the most outstanding features of the IPB80R290C3A is its ultra-low on-state resistance (RDS(on)), which is rated at a maximum of 0.290 Ohms. This low resistance minimizes conduction losses, enabling higher efficiency and reduced heat generation. Additionally, the device supports a drain-source voltage (VDS) of 800V, making it suitable for high-voltage environments such as power factor correction (PFC) stages and switch-mode power supplies (SMPS).

Another critical advantage lies in its superior switching performance. The transistor’s optimized gate charge (Qg) and output capacitance (Coss) ensure rapid turn-on and turn-off transitions. This results in lower switching losses, especially at high frequencies, allowing designers to increase power density without compromising thermal management.

The IPB80R290C3A also incorporates advanced avalanche ruggedness and body diode characteristics, enhancing system reliability under extreme conditions such as overvoltage or inductive load switching. This makes it ideal for applications requiring robust operation, including solar inverters, motor drives, and lighting systems.

From an application perspective, this CoolMOS™ transistor excels in improving energy efficiency and power density. Its high-performance metrics allow for smaller heatsinks and compact designs, reducing both system size and cost. Furthermore, its compatibility with high-frequency operation supports the development of next-generation power electronics with improved transient response and stability.

ICGOODFIND:

The Infineon IPB80R290C3A CoolMOS™ Power Transistor sets a high standard with its ultra-low RDS(on), exceptional switching efficiency, and strong reliability. It is an optimal choice for high-power and high-frequency designs aiming for superior performance and miniaturization.

Keywords:

CoolMOS™, High Efficiency, Low RDS(on), Power Transistor, Switching Performance

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