Infineon IPB011N04LG OptiMOS 5 25V Power MOSFET in a Compact PG-TDSON-8 Package

The relentless pursuit of higher efficiency and power density in modern electronic systems drives the need for advanced power semiconductor components. The Infineon IPB011N04LG, a member of the OptiMOS™ 5 25 V family, stands out as a premier solution engineered to meet these demanding requirements. Housed in the space-saving PG-TDSON-8 package, this Power MOSFET is designed to deliver exceptional performance in a minimal footprint, making it an ideal choice for a wide array of applications.

A key highlight of the IPB011N04LG is its exceptionally low on-state resistance (RDS(on)) of just 1.1 mΩ. This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. By operating cooler, the device enhances overall reliability and can often simplify thermal management designs, allowing for smaller heatsinks or even their complete elimination in some cases.

The device is optimized for use in high-frequency switching circuits, a cornerstone of modern switch-mode power supplies (SMPS), DC-DC converters, and motor control systems. Its superior switching characteristics ensure fast turn-on and turn-off times, which are essential for achieving high efficiency at elevated frequencies. This capability allows designers to shrink the size of passive components like inductors and capacitors, further increasing the power density of the end product.

The choice of package is equally significant. The PG-TDSON-8 (8x8mm) package offers an excellent balance between compact size and effective thermal and electrical performance. Its exposed pad facilitates superior heat dissipation away from the die, enabling the MOSFET to handle high continuous and pulsed currents without compromising performance. This robust construction ensures reliable operation under strenuous conditions.

Furthermore, the IPB011N04LG is particularly suited for demanding automotive applications, where it can be used in systems like battery management (BMS), LED lighting, and other power distribution tasks. Its qualification for automotive standards underscores its reliability and robustness in environments characterized by wide temperature fluctuations and stringent operational demands.

ICGOOODFIND: The Infineon IPB011N04LG OptiMOS 5 MOSFET sets a high standard with its industry-leading 1.1 mΩ RDS(on) in the compact PG-TDSON-8 package. It is a pivotal component for designers aiming to maximize efficiency and power density in applications ranging from server and telecom power to automotive systems.

Keywords: Low RDS(on), Power Density, High-Frequency Switching, PG-TDSON-8 Package, Automotive Grade.