Infineon BSD235CH6327XTSA1: High-Performance N-Channel MOSFET for Power Switching Applications

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this innovation is the Infineon BSD235CH6327XTSA1, an N-Channel MOSFET engineered to excel in demanding power switching applications. This component embodies a significant leap in performance, offering designers a superior solution for managing power in a compact footprint.

Constructed using Infineon's advanced OptiMOS™ technology, the BSD235CH6327XTSA1 is a benchmark for low-loss operation. Its core strength lies in its exceptionally low on-state resistance (R DS(on)) of just 2.0 mΩ (max.) at 10 V. This minimal resistance is crucial for minimizing conduction losses, which directly translates into higher overall system efficiency and reduced heat generation. Whether deployed in a synchronous rectification stage or a primary switch, this characteristic allows for cooler operation and can reduce the need for extensive heat sinking, saving both space and cost.

Beyond its impressive R DS(on), this MOSFET is defined by its optimized switching performance. The device features low gate charge (Q G ) and low output charge (Q oss ), which enables fast switching transitions. This is paramount in high-frequency switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits, where switching losses often become the dominant factor in total power loss. The fast switching capability allows systems to operate at higher frequencies, leading to the use of smaller passive components like inductors and capacitors, thereby increasing power density.

The BSD235CH6327XTSA1 is housed in a space-saving SuperSO8 package, making it an ideal candidate for applications where board real estate is at a premium. Despite its small size, the package is designed for effective thermal management, capable of handling a continuous drain current (I D ) of 100 A. This robust current handling, combined with a high maximum drain-source voltage (V DS ) of 30 V, makes it perfectly suited for a wide array of applications, including:

Voltage Regulator Modules (VRMs) for servers and computing motherboards.

Synchronous Rectification in switch-mode power supplies (SMPS) and adapters.

DC-DC converters in automotive systems, industrial controls, and telecommunications infrastructure.

Motor drive and control circuits for brushed and brushless DC motors.

ICGOOODFIND: The Infineon BSD235CH6327XTSA1 stands out as a top-tier N-Channel MOSFET that masterfully balances ultra-low conduction losses, fast switching speed, and robust power handling in a miniature package. It is a definitive component for engineers aiming to push the boundaries of efficiency and power density in their next-generation power designs.

Keywords: OptiMOS™, Low R DS(on), Power Switching, High Efficiency, SuperSO8 Package.